Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates
Identifieur interne : 004210 ( Main/Repository ); précédent : 004209; suivant : 004211Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates
Auteurs : RBID : Pascal:10-0417212Descripteurs français
- Pascal (Inist)
- Epitaxie, Méthode MOVPE, Tampon, Basse pression, Basse température, Microscopie électronique, Coupe transversale, Section efficace, Haute résolution, Diffraction RX, Spectrométrie SIMS, SIMS, Cathodoluminescence, Gravure, Attaque chimique, Texture, Immersion, Décollement épitaxique, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Composé binaire, Oxyde de zinc, Silicium, Sulfure de gallium, Ammoniac, Indium, Fabrication microélectronique, 8115K, InGaN, GaN, ZnO.
English descriptors
- KwdEn :
- Ammonia, Binary compounds, Buffers, Cathodoluminescence, Chemical etching, Cross section, Cross sections, Electron microscopy, Epitaxy, Etching, Gallium nitride, Gallium sulfide, High-resolution methods, Immersion, Indium, Indium nitride, Lift off, Low pressure, Low temperature, MOVPE method, Microelectronic fabrication, SIMS, Secondary ion mass spectrometry, Silicon, Ternary compounds, Texture, XRD, Zinc oxide.
Abstract
InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N2 as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate.
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Rogers</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Nanovation SARL, 103 bis Rue de Versailles</s1><s2>Orsay, 91400</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Hosseini Teherani, F" uniqKey="Hosseini Teherani F">F. Hosseini Teherani</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Nanovation SARL, 103 bis Rue de Versailles</s1><s2>Orsay, 91400</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Orsal, G" uniqKey="Orsal G">G. Orsal</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>LMOPS - UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue Edouard Belin</s1><s2>57070 METZ</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Lorraine</region><settlement type="city">METZ</settlement></placeName></affiliation></author><author><name sortKey="Moudakir, T" uniqKey="Moudakir T">T. Moudakir</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>LMOPS - UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue Edouard Belin</s1><s2>57070 METZ</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Lorraine</region><settlement type="city">METZ</settlement></placeName></affiliation></author><author><name sortKey="Gautier, S" uniqKey="Gautier S">S. Gautier</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>LMOPS - UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue Edouard Belin</s1><s2>57070 METZ</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Lorraine</region><settlement type="city">METZ</settlement></placeName></affiliation></author><author><name sortKey="Sandana, V E" uniqKey="Sandana V">V. E. Sandana</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Nanovation SARL, 103 bis Rue de Versailles</s1><s2>Orsay, 91400</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Jomard, F" uniqKey="Jomard F">F. Jomard</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>GEMAC, Université de Versailles-Saint-Quentinl, place Aristide Briand</s1><s2>92195 Meudon</s2><s3>FRA</s3><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Meudon</settlement></placeName></affiliation></author><author><name sortKey="Abid, M" uniqKey="Abid M">M. Abid</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Georgia Institute of Technology/GT-Lorraine-UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi</s1><s2>57070 Metz</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Lorraine</region><settlement type="city">Metz</settlement></placeName></affiliation></author><author><name sortKey="Molinari, M" uniqKey="Molinari M">M. Molinari</name><affiliation wicri:level="3"><inist:fA14 i1="05"><s1>LMEN, University of Reims Champagne-Ardennes, 21 rue Clement Ader</s1><s2>51685 Reims</s2><s3>FRA</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Champagne-Ardenne</region><settlement type="city">Reims</settlement></placeName></affiliation></author><author><name sortKey="Troyon, M" uniqKey="Troyon M">M. Troyon</name><affiliation wicri:level="3"><inist:fA14 i1="05"><s1>LMEN, University of Reims Champagne-Ardennes, 21 rue Clement Ader</s1><s2>51685 Reims</s2><s3>FRA</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Champagne-Ardenne</region><settlement type="city">Reims</settlement></placeName></affiliation></author><author><name sortKey="Voss, P L" uniqKey="Voss P">P. L. Voss</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Georgia Institute of Technology/GT-Lorraine-UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi</s1><s2>57070 Metz</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Lorraine</region><settlement type="city">Metz</settlement></placeName></affiliation></author><author><name sortKey="Mcgrouther, D" uniqKey="Mcgrouther D">D. Mcgrouther</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>G12 8QQ, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Chapman, J N" uniqKey="Chapman J">J. N. Chapman</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>G12 8QQ, Scotland</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0417212</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0417212 INIST</idno><idno type="RBID">Pascal:10-0417212</idno><idno type="wicri:Area/Main/Corpus">003E64</idno><idno type="wicri:Area/Main/Repository">004210</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ammonia</term><term>Binary compounds</term><term>Buffers</term><term>Cathodoluminescence</term><term>Chemical etching</term><term>Cross section</term><term>Cross sections</term><term>Electron microscopy</term><term>Epitaxy</term><term>Etching</term><term>Gallium nitride</term><term>Gallium sulfide</term><term>High-resolution methods</term><term>Immersion</term><term>Indium</term><term>Indium nitride</term><term>Lift off</term><term>Low pressure</term><term>Low temperature</term><term>MOVPE method</term><term>Microelectronic fabrication</term><term>SIMS</term><term>Secondary ion mass spectrometry</term><term>Silicon</term><term>Ternary compounds</term><term>Texture</term><term>XRD</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie</term><term>Méthode MOVPE</term><term>Tampon</term><term>Basse pression</term><term>Basse température</term><term>Microscopie électronique</term><term>Coupe transversale</term><term>Section efficace</term><term>Haute résolution</term><term>Diffraction RX</term><term>Spectrométrie SIMS</term><term>SIMS</term><term>Cathodoluminescence</term><term>Gravure</term><term>Attaque chimique</term><term>Texture</term><term>Immersion</term><term>Décollement épitaxique</term><term>Composé ternaire</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Composé binaire</term><term>Oxyde de zinc</term><term>Silicium</term><term>Sulfure de gallium</term><term>Ammoniac</term><term>Indium</term><term>Fabrication microélectronique</term><term>8115K</term><term>InGaN</term><term>GaN</term><term>ZnO</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N<sub>2</sub> as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7603</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO- buffered Si (111) substrates</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Oxide-based materials and devices : 24-27 January 2010, San Francisco, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>OUGAZZADEN (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>ROGERS (D. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>HOSSEINI TEHERANI (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>ORSAL (G.)</s1></fA11><fA11 i1="05" i2="1"><s1>MOUDAKIR (T.)</s1></fA11><fA11 i1="06" i2="1"><s1>GAUTIER (S.)</s1></fA11><fA11 i1="07" i2="1"><s1>SANDANA (V. E.)</s1></fA11><fA11 i1="08" i2="1"><s1>JOMARD (F.)</s1></fA11><fA11 i1="09" i2="1"><s1>ABID (M.)</s1></fA11><fA11 i1="10" i2="1"><s1>MOLINARI (M.)</s1></fA11><fA11 i1="11" i2="1"><s1>TROYON (M.)</s1></fA11><fA11 i1="12" i2="1"><s1>VOSS (P. L.)</s1></fA11><fA11 i1="13" i2="1"><s1>MCGROUTHER (D.)</s1></fA11><fA11 i1="14" i2="1"><s1>CHAPMAN (J. N.)</s1></fA11><fA12 i1="01" i2="1"><s1>TEHERANI (Ferechteh Hosseini)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Georgia Institute of Technology/GT-Lorraine-UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi</s1><s2>57070 Metz</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="02"><s1>Nanovation SARL, 103 bis Rue de Versailles</s1><s2>Orsay, 91400</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>LMOPS - UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue Edouard Belin</s1><s2>57070 METZ</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>GEMAC, Université de Versailles-Saint-Quentinl, place Aristide Briand</s1><s2>92195 Meudon</s2><s3>FRA</s3><sZ>8 aut.</sZ></fA14><fA14 i1="05"><s1>LMEN, University of Reims Champagne-Ardennes, 21 rue Clement Ader</s1><s2>51685 Reims</s2><s3>FRA</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="06"><s1>Department of Physics and Astronomy, University of Glasgow</s1><s2>G12 8QQ, Scotland</s2><s3>GBR</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>76031D.1-76031D.8</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, WA</s2></fA25><fA26 i1="01"><s0>978-0-8194-7999-0</s0></fA26><fA26 i1="02"><s0>0-8194-7999-3</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174681590270</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0417212</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N<sub>2</sub> as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F17</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Epitaxie</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Epitaxy</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>MOVPE method</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Tampon</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Buffers</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Basse pression</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Low pressure</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Basse température</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Low temperature</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Baja temperatura</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Microscopie électronique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electron microscopy</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Coupe transversale</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Cross section</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Corte transverso</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Section efficace</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Cross sections</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Haute résolution</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>High-resolution methods</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>XRD</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Spectrométrie SIMS</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Secondary ion mass spectrometry</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Espectrometría SIMS</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>SIMS</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>SIMS</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Cathodoluminescence</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Cathodoluminescence</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gravure</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Etching</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Attaque chimique</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Chemical etching</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Ataque químico</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Texture</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Texture</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Immersion</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Immersion</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Inmersión</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Décollement épitaxique</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Lift off</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Desprendimiento epitáxico</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>22</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>22</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>24</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Indium nitride</s0><s5>24</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>24</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Composé binaire</s0><s5>25</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Binary compounds</s0><s5>25</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>26</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>26</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>26</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>27</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>27</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Sulfure de gallium</s0><s5>28</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Gallium sulfide</s0><s5>28</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Galio sulfuro</s0><s5>28</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Ammoniac</s0><s5>29</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Ammonia</s0><s5>29</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>30</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>30</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>46</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>46</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>46</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>84</s5></fC03><fN21><s1>270</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Oxide-based materials and devices</s1><s3>San Francisco CA USA</s3><s4>2010</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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